ORCID: 0000-0002-1296-4793
Researcher ID: F-4207-2012
SCOPUS Author ID: 7103022198

Myriam Aguirre

Associate Professor of the Department of Physics of Condensed Matter at the University of Zaragoza (i. e. “Profesor titular”).

I worked at EMPA-Material Science and Technology Lab in Switzerland as Senior Researcher with permanent position between 2006 to 2011. I made postdocs at ETH-Zurich as Research and “Assistant Dozentin” (2004-2006) and at the “Universidad Complutense de Madrid” (2002-2004) with the work focused on the correlation of structure-related properties and Transmission Electron Microscopy. I obtained the PhD in Physics in 2001 at The Facultad de Ciencia Exacta y Naturales, Universidad de Buenos Aires- Argentina.

My research lines are the correlation of structure and electronic properties applied to spintronic, thermoelectric materials and neuromorphic computing. The study of multifunctional materials applied to spintronics, neuromorphic memories and AI for information technology are particular objectives on my investigation as well as of seeking the reduction of energy consumption. I have several positions in my career in several well-known Labs in Spain, UK, Switzerland, in which I have unique experience in Material Science. I have been PI in several national and international projects, much of them MSCA from the European Commission, and actually I am coordinator in on MSCA-RISE ULTIMATE-I project. I have 142 publications indexed in SCOPUS with H-index 35 and more than 3800 times cited.

I have hands-on expertise in the Aberration Corrected Transmission Electron Microscopy, HRTEM, HRSTEM-HAADF, EDX and EELS spectroscopy as well as software on image simulation and strain analysis. The materials studied were semiconductors, perovskites, metal, and the techniques for the structural characterization combined with electric and transport properties are routinely performed and constitute the core of our measurements. In particularly, the Spin Seebeck Effect, Seebeck and Anomalous Nernst Effect, Hall Effect, Spin Hall Effect, I-V and C-V measurements make up our expertise.